Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the effect of a ZnO doping layer on a silicon quantum dot (Si QD) light-emitting diode (LED). A highly doped ZnO layer was grown on a Si QD layer at room temperature using a radio-frequency sputtering. The power efficiency of Si QD LED containing the ZnO layer were greatly improved by 226% due to an increase in the electron injection through the highly doped ZnO layer into Si QDs embedded in the silicon nitride film and the high transparency of the ZnO layer.
- 2009-10-25
著者
-
Davis Robert
Department Of Materials Science And Engineering North Carolina State University
-
Park Seong-Ju
Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
-
Huh Chul
Biosensor Research Team, IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea
-
Cho Chang-Hee
Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
-
Kim Baek
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates
-
Sung Gun
Biosensor Research Team, IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea
-
Davis Robert
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates
関連論文
- Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy
- Multimodality functional imaging evaluation in a patient with Rasmussen's encephalitis
- Growth of GaN and Al_Ga_N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
- Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates
- Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer
- Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes
- Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy