Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
AlGaN-based thin film heterostructures suitable for ultraviolet light emitting diodes have been grown and fabricated into working devices with and without p-type and n-type AlGaN carrier-blocking layers at the top and the bottom of the quantum wells, respectively. The principal emission from each device occurred at 353 nm. The highest intensities of this peak were measured at all values of the injection current in the device with a p-type carrier-blocking layer at the top of the quantum well; this device also exhibited the highest values of light output power. Growth of an n-type carrier-blocking layer at the bottom of the quantum wells had an adverse effect on the light emitting diode characteristics. A broad peak centered at ${\sim}540$ nm exhibited yellow luminescence and was present in the spectra acquired from all the devices. This peak is attributed to absorption of the UV emission by and re-emission from the p-GaN and/or to the luminescence from the AlGaN within quantum wells by current injection. The intensity of this peak increased and saturated by the same order of magnitude as the intensity of the UV emission at 353 nm.
- 2005-10-15
著者
-
Davis Robert
Department Of Materials Science And Engineering North Carolina State University
-
Park Ji-Soo
Department of Materials Science and Engineering, Box 7907, North Carolina State University, Raleigh, NC 27695, U.S.A.
-
Muth John
Department of Electrical and Computer Engineering, Box 7911, North Carolina State University, Raleigh, NC 27695, U.S.A.
-
Fothergill Daryl
Department of Electrical and Computer Engineering, Box 7911, North Carolina State University, Raleigh, NC 27695, U.S.A.
-
Zhang Xiyao
Department of Electrical and Computer Engineering, Box 7911, North Carolina State University, Raleigh, NC 27695, U.S.A.
-
Reitmeier Zachary
Department of Materials Science and Engineering, Box 7907, North Carolina State University, Raleigh, NC 27695, U.S.A.
関連論文
- Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy
- Multimodality functional imaging evaluation in a patient with Rasmussen's encephalitis
- Growth of GaN and Al_Ga_N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
- Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates
- Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer
- Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes
- Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy