Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates
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概要
- 論文の詳細を見る
The effects of p-GaN capping layer and p-type carrier-blocking layer on the occurrence of parasitic emissions from 353 nm AlGaN-based light emitting diodes (LEDs) have been investigated. LEDs without a p-type Al0.25Ga0.75N carrier-blocking layer showed a shoulder peak at ${\sim}370$ nm due to electron overflow into the p-Al0.10Ga0.90N cladding layer and subsequent electron–hole recombination in the acceptor levels. Broad emission between 380 and 450 nm from LEDs having a p-GaN capping layer was caused by luminescence at 420 nm from the p-GaN capping layer, which was optically pumped by 353 nm UV emission from the quantum wells. Broad, defect-related luminescence centered at ${\sim}520$ nm was emitted from the AlGaN layers within the quantum wells.
- 2006-05-15
著者
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Davis Robert
Department Of Materials Science And Engineering North Carolina State University
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Bishop Seann
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, U.S.A.
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Park Ji-Soo
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, U.S.A.
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Park Ji-Soo
Department of Materials Science and Engineering, Box 7907, North Carolina State University, Raleigh, NC 27695, U.S.A.
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Fothergill Daryl
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, U.S.A.
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Wellenius Patrick
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, U.S.A.
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Muth John
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, U.S.A.
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Muth John
Department of Electrical and Computer Engineering, Box 7911, North Carolina State University, Raleigh, NC 27695, U.S.A.
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Fothergill Daryl
Department of Electrical and Computer Engineering, Box 7911, North Carolina State University, Raleigh, NC 27695, U.S.A.
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Davis Robert
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, U.S.A.
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