Optimization of Low-Voltage Cathodoluminescence of Electron-Beam-Evaporated Y2O3:Eu Thin Film Phosphor

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In this paper, we report the properties and the optimization of Y2O3:Eu cathodoluminescent thin film phosphor fabricated by electron-beam evaporation. Films were grown on quartz substrates and showed (111) orientation of cubic yttria. The Influence of film fabrication temperature regimes on the morphology and low-voltage cathodoluminescence (CL at 0.5 kV anode voltage) was studied. It was found that increase of substrate temperature from 400 to 500 °C results in larger and more regular grains with lower surface roughness. However, when substrate temperature exceeds 500 °C, the brightness of cathodoluminescence decreased owing to the deterioration of surface evenness and supposed increase of the surface recombination rate. Annealing induced grain growth and the improvement of color purity. The CL brightness at 3.5 kV anode voltage increased with annealing temperature with 0.33 eV activation energy. The CL brightness at 0.5 kV anode voltage is maximal at 800 °C annealing temperature and significantly decreases with higher annealing temperatures. CL results were analyzed with the use of threshold voltage and steepness coefficient parameters reflecting bulk and surface properties of the films respectively.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-09-25