Optically Pumped Lasing Action with Unusual Wavelength of Approximately 390 nm in Hexagonal GaN Microdisks Fabricated by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

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概要

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• Hexagonal GaN microdisks exhibiting lasing action with unusual wavelengths of approximately 390 nm under an optically pumped condition have been investigated. The lasing action was caused by the resonant modes of the whispering gallery mode and/or quasi-whispering gallery mode in the hexagonal microdisks. A cross-sectional transmission electron microscopy observation indicated that multiple crystalline boundaries, which are formed by stacking faults, were included in the specific GaN microdisks exhibiting such an unusual lasing action. The origin of the optical gain was discussed, based on the modification of the crystal structure associated with the stacking faults.

• 2013-04-25

著者

• Kishino Katsumi

  Sophia Univ. Tokyo Jpn

• Hara Kazuhiko

  Shizuoka University, Hamamatsu 432-8011, Japan

• Kouno Tetsuya

  Shizuoka University, Hamamatsu 432-8011, Japan

• Sakai Masaru

  University of Yamanashi, Kofu 400-8511, Japan

• Kishino Katsumi

  Sophia University, Chiyoda, Tokyo 102-8554, Japan

関連論文

• Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy
• Optimization of Low-Voltage Cathodoluminescence of Electron-Beam-Evaporated Y2O3:Eu Thin Film Phosphor
• Optically Pumped Lasing Action with Unusual Wavelength of Approximately 390 nm in Hexagonal GaN Microdisks Fabricated by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
• Quasi-Whispering Gallery Mode Lasing Action in an Asymmetric Hexagonal GaN Microdisk
• Quasi-Whispering Gallery Mode Lasing Action in an Asymmetric Hexagonal GaN Microdisk (Special Issue : Recent Advances in Nitride Semiconductors)

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