Quasi-Whispering Gallery Mode Lasing Action in an Asymmetric Hexagonal GaN Microdisk (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る
• The Japan Society of Applied Physicsの論文

著者

• Kishino Katsumi

  Sophia Univ. Tokyo Jpn

• Hara Kazuhiko

  Shizuoka University, Hamamatsu 432-8011, Japan

• Kouno Tetsuya

  Shizuoka University, Hamamatsu 432-8011, Japan

• Sakai Masaru

  University of Yamanashi, Kofu 400-8511, Japan

関連論文

• Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy
• Optimization of Low-Voltage Cathodoluminescence of Electron-Beam-Evaporated Y2O3:Eu Thin Film Phosphor
• Optically Pumped Lasing Action with Unusual Wavelength of Approximately 390 nm in Hexagonal GaN Microdisks Fabricated by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
• Quasi-Whispering Gallery Mode Lasing Action in an Asymmetric Hexagonal GaN Microdisk
• Quasi-Whispering Gallery Mode Lasing Action in an Asymmetric Hexagonal GaN Microdisk (Special Issue : Recent Advances in Nitride Semiconductors)

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