Effect of the Thickness on Morphology and Low-Voltage Cathodoluminescence of Y2O3:Eu,Zn Thin Films

概要

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An increase in the thickness ($H$) of Y2O3:Eu,Zn films in the 30–500 nm range led to crystal grain growth and roughness rise, which resulted in an increase in the slope angle of the cathodoluminescence (CL) brightness vs anode voltage characteristic curve as well as in brightness at middle-level voltages. Annealing resulted in further grain growth and an increase in brightness. The dependence of threshold voltage on thickness has a minimum at 300 nm because of the effect of $H$ on surface morphology: first, the film becomes more regular but at higher thicknesses its roughness and total surface area increase; hence, the number of surface defects and sites of radiationless recombination also increase. As a result, low-voltage CL has a maximum value at a 300 nm thickness. Thus, there is an optimum thickness for achieving maximum CL efficiency in the low electron energy region, while for higher energies efficiency increases monotonically with thickness.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-01-15