Low-Temperature Sintering of Indium Tin Oxide Thin Film Using Split Gliding Arc Plasma
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概要
- 論文の詳細を見る
The feasibility of sintering on indium tin oxide (ITO) thin film by a mesoplasma under open atmosphere was investigated. An ITO film of 300 nm thickness was prepared on a glass substrate by spin coating an ITO nanoparticle suspension. A mesoplasma of a gliding arc was irradiated on the ITO film. The plasma generated a temperature of 160 °C at the irradiation position. By utilizing nitrogen (N2) gas as the plasma working fluid, the sheet resistance was effectively reduced, compared with the use of air. A small amount of hydrogen (H2) added was more effective. A conventional gliding arc (GA) caused film damage owing to the appearance of an arc spot on the treated film, although a split gliding arc (S-GA) was effectively treated without arc spot appearance and damage. A silica binder was added to the ITO nanoparticle suspension in order to increase film adhesion and conductivity by increasing the film density. A sheet resistance of 1.9 k$\Omega$/sq was obtained at an optimum H2 concentration (1.0 vol %) in N2 and a silica binder concentration (12.5 vol %), which was similar to the resistance obtained by sintering the film on a hot plate at 300 °C.
- 2008-08-25
著者
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OKAWA Takashi
Daiken Chemical Co.
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Takikawa Hirofumi
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamanaka Shigenobu
Daiken Chemical Co. Ltd
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Shiki Hajime
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, Japan
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Ito Yukikazu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Ootsuka Takeshi
Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi, Funabashi, Chiba 274-8601, Japan
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Usuki Eiji
Sintobrator Ltd., 51 Shinmei, Ubukuji, Kitanagoya, Aichi 481-8678, Japan
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Takikawa Hirofumi
Department of Electric and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8105, Japan
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Takikawa Hirofumi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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