Effect of Annular Aperture on Solid Immersion Lens-Based Near-Field Recording
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概要
- 論文の詳細を見る
We analyzed the effect of an annular aperture on solid immersion lens (SIL)-based near-field recording (NFR) to verify the feasibility of applying an aperture to SIL-based NFR. SIL-based NFR with an annular aperture, which blocks the propagating waves, shows good characteristics such as a beam profile on the recording layer and beam propagation inside a medium. By introducing the annular aperture, the focused beam spot size and its sensitivity to the gap between SIL and the surface of the medium can be decreased, and the axial confined beam distribution can be obtained inside the medium. We also show that the general gap control method can be applied to SIL-based NFR with an annular aperture through the calculated exit pupil intensity distribution of the reflected electric field.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
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Park No-cheol
Center For Information Storage Device Yonsei University
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Park Young-Pil
Center for Information Storage Device (CISD), Yonsei University
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Kim Wan-chin
Center For Information Storage Device Yonsei University
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Yoon Yong-joong
Center For Information Storage Device Yonsei University
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Choi Hyun
Center for Information Storage Device, Yonsei University, 134 Shinchon-dong, Seodaemun-ku, Seoul 120-749, Korea
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Choi Hyun
Center for Information Storage Device, Yonsei University, 134 Shinchon-dong, Sudaemun-gu, Seoul 120-749, Korea
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Park No-Cheol
Center for Information Storage Device, Yonsei University, 134 Shinchon-dong, Sudaemun-gu, Seoul 120-749, Korea
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Kim Wan-Chin
Center for Information Storage Device, Yonsei University, 134 Shinchon-dong, Sudaemun-gu, Seoul 120-749, Korea
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Kim Wan-Chin
Center for Information Storage Device (CISD), Yonsei University, 134 Shinchon-Dong, Seodaemoon-Ku, Seoul 120-749, Korea
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Yoon Yong-Joong
Center for Information Storage Device, Yonsei University, 134 Shinchon-dong, Sudaemun-gu, Seoul 120-749, Korea
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Park Young-Pil
Center for Information Storage Device, Yonsei University, 134 Shinchon-dong, Sudaemun-gu, Seoul 120-749, Korea
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