Real-Time Variable-Resolution Complementary Metal–Oxide–Semiconductor Field-Effect Transistors Image Sensor
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概要
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In this paper, a new, efficient and simple complementary metal–oxide–semiconductor (CMOS) field-effect transistors (FETs) image sensor (CIS) readout architecture providing both real-time variable-resolution image sensing and dynamic range boosting functions is presented. The proposed correlated-double-sampling (CDS) circuit can not only reduce fixed-pattern noise (FPN) but also output the lower resolution image by real-time averaging of four pixels’ signals in square $2 \times 2$ pixels in variable-resolution mode. Variable-resolution imaging can effectively reduce the complexity of the signal process, release the loading of processing units, and accelerate the data processing in motion detection and object tracking operations. In addition, the new CDS circuit can extend dynamic range of a sensor array by analog combining the signals from different integration lengths. The new designed circuits can replace typical CDS readout circuits in typical CIS arrays to provide real-time, accurate resolution-variable imaging and dynamic range boosting without additional overhead on digital circuits.
- 2008-04-25
著者
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Chen Chih-yang
Institute Of Electro-optical Engineering National Chiao Tung University
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King Ya-Chin
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Chen Chih-Yang
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Wang Jian-Jie
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Lin Chrong-Jung
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Lin Chrong-Jung
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.
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King Ya-Chin
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.
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