Novel Self-Aligned Nitride One Time Programming with 2-bit/Cell Based on Pure 90-nm Complementary Metal–Oxide–Semiconductor Logic Technology
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概要
- 論文の詳細を見る
A novel 2-bit/cell one time programming (OTP) cell with a nitride-based storage node was developed for programmable logic applications. The fully-logic-compatible cell was successfully demonstrated using 90-nm complementary metal–oxide–semiconductor (CMOS) technology with a cell size of 0.358 μm2. This cell adopting source-side injection (SSI) programming scheme has a very large on/off window and superior writing efficiency. The self-aligned nitride storage node exhibits excellent data retention even at a logic gate oxide thickness of less than 2 nm. This new cell supports a promising solution for logic non-volatile memory (NVM) beyond the 90-nm node.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-11-25
著者
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Lin Chrong-Jung
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.
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Huang Chia-En
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.
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King Ya-Chin
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.
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Lai Han-Chao
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.
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