Structural Properties and Resistance-Switching Behavior of Thermally Grown NiO Thin Films
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概要
- 論文の詳細を見る
We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni–Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current–voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.
- 2008-03-25
著者
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Seo Sunae
Samsung Advanced Inst. Of Technol. (sait) Kyungki‐do Kor
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Lee Chang
Samsung Advanced Institute Of Technology Semiconductor Device Laboratory
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Park Bae
Department Of Physical Konkuk University
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Kim Dong-Wook
Department of Applied Physics, Hanyang University, Ansan, Kyeonggi 426-791, Korea
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Seo Sunae
Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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Jung Ranju
Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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Li Xiang-Shu
Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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Kim Dong-Chirl
Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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Park Chanwoo
Department of Applied Physics, Hanyang University, Ansan, Kyeonggi 426-791, Korea
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Shin Seongmo
Department of Applied Physics, Hanyang University, Ansan, Kyeonggi 426-791, Korea
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Lee Chang
Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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