Enhanced Dielectric Properties of (Ba,Sr)TiO_3 Thin Tilms Applicable to Tunable Microwave Devices

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概要

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• We have heteroepitaxially deposited pure and TiO_2-doped BaO_<0.6>Sr_<0.4>TiO_3(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba_<1-x>Sr_xTiO_3 (x = 0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO_2-doped BST-0.4 films.

• 社団法人応用物理学会の論文
• 2002-11-30

著者

• Park Bae

  Department Of Physical Konkuk University

• Jia Quanxi

  Superconductivity Technology Center Mail Stop K763 Los Alamos National Laboratory

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