Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures
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概要
- 論文の詳細を見る
We report on studies of the resistance switching behaviors of Pt/NiO/Pt structures, whose 60-nm-thick NiO thin films were formed by the thermal oxidation of Ni films. X-ray diffraction studies showed that a single-phase NiO film was obtained and that its lattice constant was very close to that of the bulk. Current–voltage characteristics exhibited reproducible resistance switching under a unipolar bias voltage. The switching voltage and current for the thermally grown NiO thin films did not show large variation in the oxidation temperature range, 350–550 °C.
- 2007-08-15
著者
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Park Bae
Department Of Physical Konkuk University
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Kim Dong-Wook
Department of Applied Physics, Hanyang University, Ansan, Kyeonggi 426-791, Korea
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Seo Sunae
Nanophysics TF, Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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Jung Ranju
Nanophysics TF, Samsung Advanced Institute of Technology, Suwon, Kyeonggi 440-600, Korea
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