Influence of Substrate Structure on Resistance Switch Using Simple Metal Nanogap Junction
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概要
- 論文の詳細を見る
A nonvolatile resistance hysteresis is observed in the current–voltage ($I$–$V$) characteristics of gold nanogap junctions when pulse bias voltages are applied. In order to discuss the influence of substrates on this resistance change, the $I$–$V$ characteristics of a gold nanogap junction under which a SiO2 substrate was etched were evaluated. The $I$–$V$ characteristics show a similar resistance hysteresis to that on a nanogap junction without etching. The results indicate that substrate structure has almost no influence on the resistance hysterisis. Therefore, it is concluded that these nonvolatile resistance changes occur as a result of changes in only metal electrode parts.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Naitoh Yasuhisa
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Horikawa Masayo
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Shimizu Tetsuo
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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Naitoh Yasuhisa
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
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