Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process
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概要
- 論文の詳細を見る
This study focuses on the characterization of gap fill materials for advanced ArF lithography process. The gap fill materials have the planarization property on an irregular substrate such as the patterned holes and trenches to increase the depth of focus and resolution. After planarizing the substrate surface, the gap fill materials are used to avoid the dry etching damage in the dielectric materials. In the characterization of gap fill materials with an excellent planarization properties for lithography, two key factors were identified, namely the specific relationship between the cross-link reaction group concentration of the polymers and the via filling performance, and the specific relationship between the solvent used in the polymer solution and the via filling performance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-15
著者
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Shinjo Tetsuya
Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.
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Sakaida Yasushi
Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.
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Takei Satoshi
Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.
関連論文
- Ultraviolet Cross-Link Gap Fill Materials and Planarization Applications for Patterning Metal Trenches in 32–45 nm Via First Dual Damascene Process
- Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography
- Development of Developer-Soluble Gap Fill Materials for Planarization in Via-First Dual Damascene Process
- Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography
- Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process
- Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process
- Study of Self Cross-Link Bottom Antireflective Coating and Gap Fill Materials for Sublimate Defect Reduction in ArF Lithography