Development of Developer-Soluble Gap Fill Materials for Planarization in Via-First Dual Damascene Process

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概要

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• Gap fill materials and planar-type bottom antireflective coating are needed for patterning metal trenches in the via-first dual damascene process. We have already reported on thermal cross-link gap fill materials and bottom antireflective coating as planarizing layers under a resist that can be spin-coated and etched faster than resists. In this study, developer-soluble gap fill materials were optimized in order to obtain excellent planarization, simplify the process, and increase wafer throughput. The developer-soluble gap fill materials using poly(4-hydroxystyrene) derivatives developed by an approach of the via-first dual damascene process was obtained by optimizing the concentration of the phenol group with solubility in the alkaline developer (0.26 N tetramethylammonium hydroxide, TMAH) and by thermal cross-link reaction. In addition to a superior via-filling performance, developer-soluble gap fill materials using poly(4-hydroxystyrene) derivatives showed a wide process window of prebake temperature, the controllable dissolution rate for the etch-back process, and a good CF4 etch rate of 1.4 times higher than that of a resist for etching the substrate. These results were attributed to the polymer structures of poly(4-hydroxystyrene) derivatives. Both dry plasma cleaning and wet developer cleaning can be used to remove residual gap fill materials after processing. This novel approach using developer-soluble gap fill materials as a new type of sacrificial material in an advanced lithography process makes this solution convenient for planarizing surfaces and is economically favorable owing to high throughput.

• 2008-05-25

著者

• Shinjo Tetsuya

  Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.

• Sakaida Yasushi

  Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.

• Takei Satoshi

  Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.

• Ishii Kazuhisa

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd., Toyama 939-2792, Japan

関連論文

• Ultraviolet Cross-Link Gap Fill Materials and Planarization Applications for Patterning Metal Trenches in 32–45 nm Via First Dual Damascene Process
• Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography
• Development of Developer-Soluble Gap Fill Materials for Planarization in Via-First Dual Damascene Process
• Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography
• Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process
• Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process
• Study of Self Cross-Link Bottom Antireflective Coating and Gap Fill Materials for Sublimate Defect Reduction in ArF Lithography

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