Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

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概要

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• High planarizing gap fill materials based on $\beta$-cyclodextrin in ArF photoresist under-layer materials have been developed for fast etching in CF4 gas. Gap fill materials used in the via-first dual damascene process need to have high etch rates to prevent crowning or fencing on top of the trench after etching and a small thickness bias between the dense and blanket areas to minimize issues observed during trench lithography by narrowing the process latitude. Cyclodextrin is a circular oligomer with a nanoscale porous structure that has a high number of oxygen atoms, as calculated using the Ohnishi parameter, providing high etch rates. Additionally, since gap fill materials using cyclodextrin derivatives have low viscosities and molecular weights, they are expected to exhibit excellent flow properties and minimal thermal shrinkage during baking. In this paper, we describe the composition and basic film properties of gap fill materials; planarization in the via-first dual damascene process and etch rates in CF4 gas compared with dextrin with $\alpha$-glycoside bonds in polysaccharide, poly(2-hydroxypropyl methacrylate) and poly(4-hydroxystyrene). The $\beta$-cyclodextrin used in this study was obtained by esterifying the hydroxyl groups of dextrin resulting in improved wettability on via substrates and solubility in photoresist solvents such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate and ethyl lactate. Gap fill materials using cyclodextrin derivatives showed good planarization and via filling performance without observing voids in via holes. In addition to superior via filling performance, the etch rate of gap fill materials using $\beta$-cyclodextrin derivatives was 2.8–2.9 times higher than that of an ArF photoresist, evaluated under CF4 gas conditions by reactive ion etching. These results were attributed to the combination of both nanoscale porous structures and a high density of oxygen atoms in our gap fill materials using cyclodextrin derivatives. The cyclodextrin derivatives may be applicable as a new type of sacrificial material under the photoresist in ArF lithography.

• 2007-11-15

著者

• Shinjo Tetsuya

  Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.

• Sakaida Yasushi

  Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.

• Takei Satoshi

  Electronic Materials Research Laboratories Nissan Chemical Industries Ltd.

• Sakaida Yasushi

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd., Toyama 939-2792, Japan

• Hashimoto Keisuke

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd., Toyama 939-2792, Japan

• Takei Satoshi

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd., Toyama 939-2792, Japan

• Shinjo Tetsuya

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd., Toyama 939-2792, Japan

関連論文

• Ultraviolet Cross-Link Gap Fill Materials and Planarization Applications for Patterning Metal Trenches in 32–45 nm Via First Dual Damascene Process
• Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography
• Development of Developer-Soluble Gap Fill Materials for Planarization in Via-First Dual Damascene Process
• Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography
• Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process
• Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process
• Study of Self Cross-Link Bottom Antireflective Coating and Gap Fill Materials for Sublimate Defect Reduction in ArF Lithography

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