Growth of Silicon Nanowires by Nanometer-Sized Tip Manipulation
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概要
- 論文の詳細を見る
Polycrystalline silicon (Si) nanowires were produced inside a transmission electron microscope by manipulating a nanometer-sized Si tip on a Si plate, both covered with natural oxide layers in a high vacuum at room temperature. The growth procedure of Si nanowires was observed in situ by transmission electron microscopy, and their electric conductivity and mechanical strength were simultaneously measured with the functions of scanning probe microscopy. It was found that the growth was caused by the migration of atoms owing to the application of a bias voltage of 10 V. The Si nanowires showed electric conduction with a current density ranging from $10^{9}$ to $10^{11}$ A/m2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-15
著者
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Kizuka Tokushi
Institute Of Industrial Science The University Of Tokyo
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Takatani Yasuhiro
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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