Electrical Characteristics and Preparation of (Ba0.5Sr0.5)TiO3 Films by Spray Pyrolysis and Rapid Thermal Annealing
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概要
- 論文の詳細を見る
Functional films of (Ba0.5Sr0.5)TiO3 on Pt (1000 Å)/Ti (100 Å)/SiO2 (2000 Å)/Si substrates are prepared by spray pyrolysis and subsequently rapid thermal annealing. Barium nitrate, strontium nitrate and titanium isopropoxide are used as starting materials with ethylene glycol as solvent. For (Ba0.5Sr0.5)TiO3 functional thin film, thermal characteristics of the precursor powder scratched from as-sprayed films show a remarkable peak around 300–400 °C and 57.7% weight loss up to 1000 °C. The as-sprayed precursor film with coffee-like color and amorphous-like phase is transformed into the resultant film with white, crystalline perovskite phase and characteristic peaks (110) and (100). The resultant films show correspondent increases of dielectric constant, leakage current and dissipation factor with increasing annealing temperatures. The dielectric constant is 264 and tangent loss is 0.21 in the resultant films annealed at 750 °C for 5 min while leakage current density is $1.5\times 10^{-6}$ A/cm2 in the film annealed at 550 °C for 5 min.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Chen Mi
Department Of Materials Science And Engineering National Chiao-tung University
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Kawai Tomoji
Nanoscience And Nanotechnology Center The Institute Of Scientific And Industrial Research Osaka Univ
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Ku Hong-Kou
Nanoscience and Nanotechnology Center, The Institute of Scientific Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Koo Horng-Show
Nanoscience and Nanotechnology Center, The Institute of Scientific Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Kawai Tomoji
Nanoscience and Nanotechnology Center, The Institute of Scientific Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Chen Mi
Department of Materials Science and Engineering, Ming-Hsin University of Science and Technology, Hsinchu, Hsinfeng 301, Taiwan, R.O.C.
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