A New Cerium-Based Ternary Oxide Slurry, CeTi2O6, for Chemical-Mechanical Polishing
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概要
- 論文の詳細を見る
A new ternary oxide slurry, CeTi2O6 containing Ce4+ ions, was found to be effective as an abrasive in chemical-mechanical polishing (CMP). The ternary oxide was synthesized by the Pechini polymerizable complex (PC) method. X-ray diffraction (XRD) Rietveld analysis indicated that the oxide possesses a single CeTi2O6 phase of a brannerite structure ($C2/m$, No. 12). When CeTi2O6 was used as an abrasive slurry for polishing thin oxide film, the removal rate was as high as that of ceria (CeO2) slurry.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
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Imamura Hayao
Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University
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Sakata Yoshihisa
Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University
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Koyama Naoyuki
Electronic Materials R&D Center, Hitachi Chemical Co., Ltd., 1380-1 Nishihara, Tarasaki, Hitachi-Naka, Ibaraki 312-0003, Japan
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Ashizawa Toranosuke
Semiconductor Materials Division, Hitachi Chemical Co., Ltd., 4-13-1 Higashi, Hitachi, Ibaraki 317-8555, Japan
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Yoshida Masato
Electronic Materials R&D Center, Hitachi Chemical Co., Ltd., 1380-1 Nishihara, Tarasaki, Hitachi-Naka, Ibaraki 312-0003, Japan
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Sakata Yoshihisa
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Imamura Hayao
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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