High-Accuracy Proximity Effect Correction for Mask Writing

概要

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A high-accuracy proximity effect correction method for high-precision masks has been developed to satisfy current and future requirements. In this paper, we explain the primary features of this method and the theories on which it is based. The developed formula for obtaining the optimum correction dose is expressed in the form of either iterations or an infinite series of functions. The advantage of this formula is that it quickly converges to the sought value, bringing about high-accuracy proximity effect correction with a high calculation speed. A coarse graining method (covering pattern density and representative figure methods) for reducing calculation time is explained. This method has been adopted for an EX-11 series and has been used for mask writing from the 180 nm design rule onward.
2007-02-15

著者

HATTORI Yoshiaki
Advanced Research Laboratory, R&D Center, Toshiba Corporation
ANZE Hirohito
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semic
TSUCHIYA Seiichi
EB Mask Equipment Engineering Department, Nuflare Technology, Inc.
SHIMIZU Mitsuko
Advanced Research Laboratory, R&D Center, Toshiba Corporation
INOUE Hideo
EB Mask Equipment Engineering Department, Nuflare Technology, Inc.
TAKIGAWA Tadahiro
Marketing Department, Nuflare Technology Inc.
Matsuki Kazuto
Advanced Research Laboratory R&d Center Toshiba Corporation
Abe Takayuki
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
Tojo Toru
Advanced Lsi Laboratory Corporate R&d Center Toshiba Corporation
Oogi Susumu
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
Kamikubo Takashi
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
IIJIMA Tomohiro
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
Tojo Toru
Advanced Research Laboratory, R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-001, Japan
Abe Takayuki
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Iijima Tomohiro
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Oogi Susumu
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Tsuchiya Seiichi
EB Mask Equipment Engineering Department, Nuflare Technology, Inc., 2068-3 Ooka, Numazu, Shizuoka 410-8510, Japan
Shimizu Mitsuko
Advanced Research Laboratory, R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-001, Japan
Takigawa Tadahiro
Marketing Department, Nuflare Technology Inc., 2068-3 Ooka, Numazu 410-8510, Japan
Hattori Yoshiaki
Advanced Research Laboratory, R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-001, Japan
Kamikubo Takashi
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Inoue Hideo
EB Mask Equipment Engineering Department, Nuflare Technology, Inc., 2068-3 Ooka, Numazu, Shizuoka 410-8510, Japan
Anze Hirohito
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Matsuki Kazuto
Advanced Research Laboratory, R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-001, Japan

High-Accuracy Proximity Effect Correction for Mask Writing

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