Global Critical Dimension Correction: I. Fogging Effect Correction

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概要

• 論文の詳細を見る

• Present LSI technology requires very strict critical dimension (CD) control on masks. An electron beam (EB) mask writer has been widely used but is known to induce a fogging effect that affects CD control. In this paper, a new formula for calculating the optimum dose required to correct both the fogging effect and the proximity effect is proposed. This formula is expressed as the product of the proximity effect and fogging effect correction terms. Features of this new formula are that (1) the fogging effect correction term includes the result of the proximity effect correction, and (2) the formula can provide an accurate value for the optimum dose required to correct both the proximity and fogging effects. Correction accuracy is evaluated under the conditions that the proximity effect parameter $\eta$ and the fogging effect parameter $\theta$ are 0.8 and 0.1, respectively. It is found that when using a conventional fogging effect correction method, a significant correction error (1.7% in energy and 3.4 nm in dimension) appears because the method does not use the results of the proximity effect correction. On the other hand, our method can suppress the correction error to less than 0.15% in energy (0.29 nm in dimension).

• 2007-06-15

著者

• TSUCHIYA Seiichi

  EB Mask Equipment Engineering Department, Nuflare Technology, Inc.

• Abe Takayuki

  Marketing Department, Nuflare Technology Inc., 3-2-6 Shin-Yokohama, Kohoku-ku, Yokohama 222-0033, Japan

• Yashima Jun

  Mask Drawing Equipment Development Department, Nuflare Technology Inc., 8 Shinsugita, Isogo-ku, Yokohama 235-0032, Japan

• Iijima Tomohiro

  EB Mask Equipment Engineering Department, Nuflare Technology Inc., 2068-3 Ooka, Numazu, Shizuoka 410-8510, Japan

• Anze Hirohito

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Iijima Tomohiro

  EB Mask Equipment Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Suzuki Jun-ichi

  Service Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Oogi Susumu

  Mask Drawing Equipment Development Department, Nuflare Technology, Inc., Yokohama 222-0033, Japan

• Onimaru Yoshiaki

  EB Mask Equipment Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Tsurumaki Hideyuki

  Mask Drawing Equipment Development Department, Nuflare Technology, Inc., Yokohama 222-0033, Japan

• Hattori Yoshiaki

  Sales and Marketing Division, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Tsurumaki Hideyuki

  Mask Drawing Equipment Development Department, Nuflare Technology Inc., Shin-Yokohama, Kohoku, Yokohama 222-0033, Japan

• Tsuchiya Seiichi

  EB Mask Equipment Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Yashima Jun

  Mask Drawing Equipment Development Department, Nuflare Technology, Inc., Yokohama 222-0033, Japan

• Anze Hirohito

  Mask Drawing Equipment Development Department, Nuflare Technology, Inc., Yokohama 222-0033, Japan

関連論文

• High-Accuracy Proximity Effect Correction for Mask Writing
• Proximity Effect Correction for Mask Writing Taking Resist Development Processes into Account
• High Accuracy Correction of Critical Dimension Errors Appearing in Large Scale Integrated Circuits Fabrication Processes: Pattern-Based Model
• Global Critical Dimension Correction: I. Fogging Effect Correction
• Global Critical Dimension Correction: II
• High-Accuracy Proximity Effect Correction for Mask Writing

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