Proximity Effect Correction for Mask Writing Taking Resist Development Processes into Account

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概要

• 論文の詳細を見る

• In this paper, a proximity effect correction method for mask fabrication with taking into account resist development processes is proposed. The idea of our method is that the figure size of a developed resist is determined using a suitable function of exposure dose and the normalized deposited energy by backscattering electrons, under the assumption of high acceleration voltage electron beam mask writing. This suitable function should be determined empirically to include the effects of resist development process, and is called development process function in this paper. Methods of deriving the development process function, proximity effect correction equation, and optimum correction dose from the equation are proposed. To check the accuracy of our method, a sample model of development process function is introduced under the condition that the conventional threshold model has an intrinsic error of 8 nm. The method proposed in this paper is found to be able to suppress the correction error of this sample model to less than 1 and 0.2 nm by two and three iterations, respectively. The method proposed in this paper is expected to provide high accuracy proximity effect correction in future mask fabrication.

• 2009-09-25

著者

• Abe Takayuki

  Marketing Department, Nuflare Technology Inc., Shin-Yokohama, Kohoku, Yokohama 222-0033, Japan

• Abe Takayuki

  Marketing Department, Nuflare Technology, Inc., Shin-Yokohama, Kohoku-ku, Yokohama 222-0033, Japan

• Abe Takayuki

  Marketing Department, Nuflare Technology Inc., 3-2-6 Shin-Yokohama, Kohoku-ku, Yokohama 222-0033, Japan

• Shibata Hayato

  Mask Drawing Equipment Development Department, Nuflare Technology Inc., 8 Shinsugita, Isogo-ku, Yokohama 235-0032, Japan

• Yashima Jun

  Mask Drawing Equipment Development Department, Nuflare Technology Inc., 8 Shinsugita, Isogo-ku, Yokohama 235-0032, Japan

• Kato Yasuo

  Mask Drawing Equipment Development Department, Nuflare Technology Inc., 8 Shinsugita, Isogo-ku, Yokohama 235-0032, Japan

• Matsumoto Hiroshi

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Motosugi Tomoo

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Ohnishi Takayuki

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Iijima Tomohiro

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Anze Hirohito

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Numazu, Shizuoka 410-8510, Japan

• Shibata Hayato

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Shinsugita, Isogo-ku, Yokohama 235-0032, Japan

• Kato Yasuo

  Mask Lithography Engineering Department, Nuflare Technology, Inc., Shinsugita, Isogo-ku, Yokohama 235-0032, Japan

• Anze Hirohito

  Mask Drawing Equipment Development Department, Nuflare Technology, Inc., Yokohama 222-0033, Japan

関連論文

• Proximity Effect Correction for Mask Writing Taking Resist Development Processes into Account
• High Accuracy Correction of Critical Dimension Errors Appearing in Large Scale Integrated Circuits Fabrication Processes: Pattern-Based Model
• Global Critical Dimension Correction: I. Fogging Effect Correction
• Global Critical Dimension Correction: II

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