Nondestructive Photoacoustic Measurement of Doping Densities in Bulk GaAs
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概要
- 論文の詳細を見る
The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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NOH Sam
Korea Research Institute of Standards and Science
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Park Seung-han
National Research Laboratory Of Nonlinear Optics College Of Science Yonsei University
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Yim Sang-youp
National Research Laboratory Of Nonlinear Optics College Of Science Yonsei University
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Lim Jong-Tae
Department of Chemistry, Yonsei University, Seoul 120-749, Korea
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Park Seung-Han
National Research Laboratory of Nonlinear Optics, Department of Physics, Yonsei University, Seoul 120-749, Korea
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Choi Joong-Gill
Department of Chemistry, Yonsei University, Seoul 120-749, Korea
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Je Koo-Chul
National Research Laboratory of Nonlinear Optics, Department of Physics, Yonsei University, Seoul 120-749, Korea
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Yim Sang-Youp
National Research Laboratory of Nonlinear Optics, Department of Physics, Yonsei University, Seoul 120-749, Korea
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Noh Sam
Korea Research Institute of Standards and Science, Taejon 305-600, Korea
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