Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates
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概要
- 論文の詳細を見る
We demonstrate high-efficiency UV InAlGaN multiple-quantum-well light-emitting diodes (LED) deposited by metal–organic chemical vapor deposition (MOCVD) on hydride vapor phase epitaxy (HVPE) grown AlGaN/sapphire templates. The combination of HVPE and MOCVD allows the separate optimization of the growth of high-quality AlGaN/sapphire templates and sophisticated LED heterostructures. High-performance UV LEDs emitting in the range between 373 and 289 nm have been realized. LED devices emitting near 330 nm exhibit cw light output power of more than 11 mW and an external quantum efficiency (EQE) of 1.5%. Under pulsed bias testing, peak light output is more than 55 mW with an EQE of 2.3%.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Dmitriev Vladimir
Tdi Inc.
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Johnson Noble
Palo Alto Research Center Inc.
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Yang Zhihong
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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Kneissl Michael
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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Teepe Mark
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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Knollenberg Cliff
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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Usikov Alexander
TDI Inc., 12214 Plum Orchard Drive, Silver Spring, MD 20904, U.S.A.
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