Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
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概要
- 論文の詳細を見る
- 2011-09-25
著者
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Johnson Noble
Palo Alto Research Center Inc.
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WUNDERER Thomas
Palo Alto Research Center, Inc.
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CHUA Christopher
Palo Alto Research Center, Inc.
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YANG Zhihong
Palo Alto Research Center, Inc.
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NORTHRUP John
Palo Alto Research Center, Inc.
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GARRETT Gregory
US Army Research Laboratory
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SHEN Hongen
US Army Research Laboratory
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WRABACK Michael
US Army Research Laboratory
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Chua Christopher
Palo Alto Research Center Inc.
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Yang Zhihong
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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Northrup John
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
関連論文
- High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
- Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
- Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates
- Effects of an Electrically Conducting Layer at the Zinc Oxide Surface
- Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors: Role of van der Waals Interactions
- 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
- In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers
- 270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power
- Radiation Induced Hydrogen Rearrangement in Poly(3-alkylthiophene)
- Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors : Role of van der Waals Interactions
- In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers
- 270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power