270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power
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概要
- 論文の詳細を見る
- 2013-03-00
著者
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Gibb Shawn
Crystal Is Inc.
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Mendrick Mark
Crystal Is Inc.
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Schowalter Leo
Crystal Is Inc.
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Grandusky James
Crystal Is Inc.
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GARRETT Gregory
US Army Research Laboratory
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WRABACK Michael
US Army Research Laboratory
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Chen Jianfeng
Crystal IS, Inc., 70 Cohoes Avenue, Green Island, NY 12183, U.S.A.
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Moe Craig
Crystal IS, Inc., 70 Cohoes Avenue, Green Island, NY 12183, U.S.A.
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Rodak Lee
US Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Road, Adelphi, MD 20783, U.S.A.
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Mendrick Mark
Crystal IS, Inc., 70 Cohoes Avenue, Green Island, NY 12183, U.S.A.
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MOE Craig
Crystal IS, Inc.
関連論文
- Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates
- High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
- Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
- 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
- 270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power
- 270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power