Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates
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概要
- 論文の詳細を見る
- 2010-07-25
著者
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GRANDUSKY James
Crystal IS, Inc.
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GIBB Shawn
Crystal IS, Inc.
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MENDRICK Mark
Crystal IS, Inc.
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SCHOWALTER Leo
Crystal IS, Inc.
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Gibb Shawn
Crystal Is Inc.
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Mendrick Mark
Crystal Is Inc.
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Schowalter Leo
Crystal Is Inc.
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Grandusky James
Crystal Is Inc.
関連論文
- Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates
- High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
- 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
- 270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power
- 270nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60mW Continuous Wave Output Power