Polarization Reversal Property of Ferroelectric Thin Film for Ferroelectric Memories
スポンサーリンク
概要
- 論文の詳細を見る
We studied the polarization reversal property of a ferroelectric thin film. Ferroelectric thin films of (PbLa)(ZrTi)O3 (PLZT) were prepared by chemical solution deposition (CSD). Applying triangular wave and pulse wave voltages to specimens, we observed the rising of the coercive field and the activation field of ferroelectric thin films with increasing frequency. This shows that the polarization reversal is suppressed because of the increase in the viscosity of the ferroelectric domain wall caused by the increase in the frequency of the applied electric field. Additionally, we measured the frequency dependence of dielectric constant and found that, compared with the experimental data and the Debye model, the relaxation time of the dipole increases because the reversal of the dipole cannot follow the external electric field. As a result of these, it is found that the increase in the viscosity of ferroelectric domain wall is caused by the inability of the reversal of the dipole to follow the external electric field.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
-
Masuda Yoichiro
Graduate School of Electric and Electronic Engineering, Hachinohe Institute of Technology, 88-1 Oobiraki, Myo, Hachinohe, Aomori 031-8501, Japan
-
Echizen Masahiro
Graduate School of Electric and Electronic Engineering, Hachinohe Institute of Technology, 88-1 Oobiraki, Myo, Hachinohe, Aomori 031-8501, Japan
関連論文
- Thickness Dependence of Electrical Properties for High-$k$ SrTa2O6 Thin Films Fabricated by Sol--Gel Method
- Thermally Stimulated Current Analysis of Defects in Sol-Gel Derived SrTaO Thin-Film Capacitors (Special Issue : Ferroelectric Materials and Their Applications)
- Effect of Interface Structure on Electrical Properties of (Ba,Sr)TiO3 Thin Films on Glazed Alumina Substrate
- Annealing and Composition Effects of (BaxSr1-x)Ta2O6 Thin Films Fabricated by Sol–Gel Method
- Preparation of (Pb,La)(Zr,Ti)O3 Epitaxial Thin Films by Modified Sol–Gel Method and Their Crystallinity Evaluation
- Polarization Reversal Property of Ferroelectric Thin Film for Ferroelectric Memories
- Electro-optic Anisotropy of Epitaxially Grown (Pb,La)(Zr,Ti)O3 Films Fabricated by Modified Sol–Gel Process