Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films
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概要
- 論文の詳細を見る
Ti–Si–N films were deposited on the grounded Si(100) substrates by inductively coupled plasma (ICP)-assisted magnetron sputtering. The incident ion flux density at the substrate was varied by controlling the RF power. The effects of low-energy ion flux irradiation on the growth, microstructure and mechanical properties of the Ti–Si–N films have been investigated. An increase in ion flux density causes a transfer of the preferred orientation from TiN(111) to TiN(200). Under the conditions of high-density (${\sim}2.0$ mA/cm2) low-energy (${\sim}20$ eV) ion irradiation, low-stressed superhard nanocrystalline TiN/amorphous Si3N4 (nc-TiN/a-Si3N4) film was synthesized at the relatively low deposition temperature of 300 °C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
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Li Zhuguo
School Of Materials Science And Engineering Shanghai Jiao Tong University
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Miyake Shoji
Liaison Center Kinki University
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Wu Yixiong
School Of Materials Science And Engineering Shanghai Jiao Tong University
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Miyake Shoji
Liaison Center, Kinki University, 3-4-1 Kowakae, Higashi-Osaka, Osaka 577-8502, Japan
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Wu Yixiong
School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, P. R. China
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Li Zhuguo
School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, P. R. China
関連論文
- Effects of Copper Doping on Structure and Properties of TiN Films Prepared by Magnetron Sputtering Assisted by Low Energy Ion Flux Irradiation
- Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films
- Effects of Copper Doping on Structure and Properties of TiN Films Prepared by Magnetron Sputtering Assisted by Low Energy Ion Flux Irradiation
- Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films