Temporal Saturation Effects of Nanoscale Contact Holes Fabricated by Chemical Shrink Techniques

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概要

• 論文の詳細を見る

• The temporal saturation effects of the critical dimensions of nanoscale contact holes are investigated by a two-dimensional reaction–diffusion simulator for the chemical shrink techniques of nanolithography. Models included with the simulator are the crosslinking reaction of water-soluble polymers and crosslinkers, the diffusion of photoacids, and the inactivation of photoacids. Within the the statistical errors of the experimental data, the simulation critical dimensions agree with the experiment for baking temperatures over 105°C and for all baking times. It is found that the temporal saturation of the contact holes' critical dimensions can be explained by the photoacid inactivating reaction included in the simulator.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-08-15

著者

• Ting Jyh-hua

  National Nano Device Laboratories

• Li Tsung-lung

  Department Of Applied Physics National Chia-yi University

• Ting Jyh-Hua

  National Nano Device Laboratories, 26 Prosperity Road I, Science-Based Industrial Park, Hsinchu 30078, Taiwan, R.O.C.

• Li Tsung-Lung

  Department of Applied Physics, National Chia-Yi University, 300 Hsueh-Fu Road, Chiayi 60004, Taiwan, R.O.C.

関連論文

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• Optimal Temperature-Time Condition for the Post-Exposure Bake Process of Deep-UV Resists : Semiconductors
• Time Dependence of the Reaction-Diffusion Simulation of the Postexposure Bake Process of Deep-Ultraviolet Resists(Semiconductors)
• Temporal Saturation Effects of Nanoscale Contact Holes Fabricated by Chemical Shrink Techniques
• Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

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