Optimal Temperature-Time Condition for the Post-Exposure Bake Process of Deep-UV Resists : Semiconductors

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概要

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• A simulator is devised to investigate the effects of temperature-time history on the post-exposure bake of deep-UV resists based on a simple reaction-diffusion model whose reaction coefficients and diffusion coefficient are treated as temperature-dependent parameters over the entire course of the bake process. The temperature, in turn, is modeled by exponential functions with heating and cooling time constants. Because the reaction slows down as the bake process proceeds, the cooling stage has to be much longer than that for the heating. The optimal process condition determined from this simulation is the maintenance of the cooling/heating constant ratio between 20 and 30.

• 2001-03-15

著者

• Ting Jyh-hua

  National Nano Device Laboratories

• Li Tsung-lung

  Department Of Applied Physics National Chia-yi University

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