Time Dependence of the Reaction-Diffusion Simulation of the Postexposure Bake Process of Deep-Ultraviolet Resists(Semiconductors)

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概要

• 論文の詳細を見る

• The time-dependent postexposure bake (TDPEB) simulator, previously reported to include the time dependence of parameters in the entire course of the postexposure bake (PEB) simulation, is used to simulate the PEB process with different combinations of bake times and pattern dimensions. Comparison of the results of simulation shows that the time dependence of the simulation is greater for shorter bake times.

• 社団法人応用物理学会の論文
• 2002-01-15

著者

• Ting J‐h

  National Nano Device Laboratories

• Ting Jyh-hua

  National Nano Device Laboratories

• Li T‐l

  Department Of Applied Physics National Chia-yi University

• LI Tsung-Lung

  Department of Applied Physics, National Chia-Yi University

• Li Tsung-lung

  Department Of Applied Physics National Chia-yi University

関連論文

• Effects of Plasma Power and Plasma Sheath on Field Emission Properties of Carbon Nanotubes
• Optimal Temperature-Time Condition for the Post-Exposure Bake Process of Deep-UV Resists : Semiconductors
• Time Dependence of the Reaction-Diffusion Simulation of the Postexposure Bake Process of Deep-Ultraviolet Resists(Semiconductors)
• Temporal Saturation Effects of Nanoscale Contact Holes Fabricated by Chemical Shrink Techniques
• Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

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