Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 μm Quantum Dot Lasers
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概要
- 論文の詳細を見る
A detailed study of the operating characteristics of low threshold current density 1.3 μm quantum dot lasers is reported. The effects of gain saturation are discussed and the temperature performance of these devices is shown to be enhanced by the implementation of improved laser fabrication technologies.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Hogg Richard
Epsrc National Centre For Iii-v Technologies Department Of Electronic & Electrical Engineering U
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Liu Hui-Yun
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Ray Sumon
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Groom Kristian
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Sellers Ian
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Hopkinson Mark
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Badcock Tom
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Ramsay Andrew
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Mowbray David
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Skolnick Maurice
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Ray Sumon
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Ray Sumon
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Sellers Ian
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Ramsay Andrew
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Groom Kristian
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Groom Kristian
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
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Hopkinson Mark
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Hopkinson Mark
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
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Skolnick Maurice
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RN, U.K.
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Hogg Richard
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
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Hogg Richard
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
関連論文
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- Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes
- Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 μm Quantum Dot Lasers