A Quantum Dot Swept Laser Source Based upon a Multisection Laser Device

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概要

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An all semiconductor swept laser source relying on state filling in quantum dot lasers is discussed. The use of a multi-contact laser operating at the saturated gain of the ground state allows a new type of swept laser source to be realised. Analysis of the prototype device is made and design rules for optimised operation are discussed.
2008-04-25

著者

Hogg Richard
Epsrc National Centre For Iii-v Technologies Department Of Electronic & Electrical Engineering U
Groom Kristian
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Hopkinson Mark
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Stevens Benjamin
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Childs David
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Stevens Benjamin
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Hogg Richard
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
Childs David
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom

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