Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes
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概要
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We report optimised epitaxial growth conditions which allow the realization of high power quantum dot super-luminescent diodes. The engineering of the thickness of the low growth temperature GaAs barrier layer results in a significant improvement in laser device performance and a concomitant improvement in super-luminescent diode performance.
- 2007-04-30
著者
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Ray Sumon
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Groom Kristian
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Groom Kristian
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
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Hopkinson Mark
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Hopkinson Mark
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
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Hogg Richard
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Hogg Richard
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
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Liu Hui
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Choi Tom
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Liew San
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
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Liew San
EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, U.K.
関連論文
- A Quantum Dot Swept Laser Source Based upon a Multisection Laser Device
- Fabrication and Characterization of InP-Based Quantum Cascade Distributed Feedback Lasers with Inductively Coupled Plasma Etched Lateral Gratings
- Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes
- Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 μm Quantum Dot Lasers