Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films
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概要
- 論文の詳細を見る
Monitoring of glass transition temperature in complex lithographic structures using an interferometry based methodology, is demonstrated. The method is applied in the case of bilayer photoresist structures, where the $T_{\text{g}}^{\text{film}}$ values of both bottom and top polymeric layers are measured simultaneously. Furthermore, in the case of processed photoresist films the obtained signal provides the $T_{\text{g}}^{\text{film}}$ value of resist areas exposed at different doses, enabling in situ measurements for material and process optimization studies.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-08-15
著者
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Raptis Ioannis
Institute Of Microelectronics (imel) Ncsr "demokritos
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NIAKOULA Dimitra
Institute of Microelectronics, NCSR "DEMOKRITOS"
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Argitis Panagiotis
Institute Of Microelectronics (imel) Ncsr "demokritos
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Goustouridis Dimitrios
Institute Of Microelectronics Ncsr "demokritos
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Raptis Ioannis
Institute of Microelectronics, NCSR "DEMOKRITOS", 15310 Ag. Paraskevi, Attikis, Greece
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Niakoula Dimitra
Institute of Microelectronics, NCSR "DEMOKRITOS", 15310 Ag. Paraskevi, Attikis, Greece
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Argitis Panagiotis
Institute of Microelectronics, NCSR "DEMOKRITOS", 15310 Ag. Paraskevi, Attikis, Greece
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