Determination of Acid Diffusion Parameters and Proximity Effect Correction for Highly Dense 0.15 μm Features on SAL-601

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-10-15

著者

• Raptis Ioannis

  Institute Of Microelectronics Ncsr "demokritos

• Raptis Ioannis

  Institute Of Microelectronics (imel) Ncsr "demokritos

• Raptis I

  Ncsr “demokritos" Attikis Grc

関連論文

• Determination of Acid Diffusion Parameters and Proximity Effect Correction for Highly Dense 0.15 μm Features on SAL-601
• Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films
• Silylation and Dry Development of Chemically Amplified Resists SAL601, AZPN114, and Epoxidised Resist (EPR) for High Resolution Electron-Beam Lithography
• Electron Beam Lithography Simulation on Homogeneous and Multilayer Substrates
• A regenerable flow-through affinity sensor for label-free detection of proteins and DNA
• Realization and Simulation of High-Aspect-Ratio Micro/Nanostructures by Proton Beam Writing
• Resist Lithographic Performance Enhancement Based on Solvent Removal Measurements by Optical Interferometry : Semiconductors
• Stochastic Simulation of Material and Process Effects on the Patterning of Complex Layouts
• Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films

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