Realization and Simulation of High-Aspect-Ratio Micro/Nanostructures by Proton Beam Writing

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概要

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• Among the patterning technologies proposed and applied for the realization of high-aspect-ratio structures in the micro- and nanoscale, proton beam writing (PBW) is considered to be a valuable tool for maskless patterning of such structures owing to the unique ability of protons to maintain a straight path over long distances. In this work, the PBW capabilities are demonstrated through simulation results of fine structures in resist films. These results prove the capability of PBW to produce very tall structures with almost vertical sidewalls, with the aspect ratio limited practically only by the resist performance and the beam diameter provided. The performance of PBW is explored and proved through the patterning of an aqueous base developable negative chemically amplified resist (TADEP, thick aqueous base developable epoxy based resist). By employing PBW on a 2.0-μm-thick TADEP, patterns with 110 nm linewidth and an aspect ratio of 18 were resolved.

• 2008-11-25

著者

• Raptis Ioannis

  Institute Of Microelectronics (imel) Ncsr "demokritos

• Goustouridis Dimitrios

  Institute Of Microelectronics Ncsr "demokritos

• Raptis Ioannis

  Institute of Microelectronics, NCSR "Demokritos", Athens 15310, Greece

• Tsikrikas Nikolaos

  Institute of Microelectronics, NCSR "Demokritos", Athens 15310, Greece

• Valamontes Evangelos

  Department of Telecommunications, University of Peloponnese, GR-22100 Tripoli, Greece

• Chatzichristidi Margarita

  Institute of Microelectronics, NCSR "Demokritos", Athens 15310, Greece

• Potiriadis Constantinos

  Greek Atomic Energy Commission, Agia Paraskevi, Attiki 15310, Greece

• van Kan

  Engineering Science Programme, CIBA, Physics Department, National University of Singapore, Singapore

• Watt Frank

  Centre for Ion Beam Applications, Physics Department, National University of Singapore, Singapore

• Chatzichristidi Margarita

  Institute of Microelectronics, NCSR "Demokritos", Athens 15310, Greece

関連論文

• Determination of Acid Diffusion Parameters and Proximity Effect Correction for Highly Dense 0.15 μm Features on SAL-601
• Silylation and Dry Development of Chemically Amplified Resists SAL601, AZPN114, and Epoxidised Resist (EPR) for High Resolution Electron-Beam Lithography
• Electron Beam Lithography Simulation on Homogeneous and Multilayer Substrates
• A regenerable flow-through affinity sensor for label-free detection of proteins and DNA
• Realization and Simulation of High-Aspect-Ratio Micro/Nanostructures by Proton Beam Writing
• Resist Lithographic Performance Enhancement Based on Solvent Removal Measurements by Optical Interferometry : Semiconductors
• Stochastic Simulation of Material and Process Effects on the Patterning of Complex Layouts
• Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films

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