Resist Lithographic Performance Enhancement Based on Solvent Removal Measurements by Optical Interferometry : Semiconductors
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概要
- 論文の詳細を見る
Post apply bake (PAB) effect understanding and control resulting to enhanced lithographic performance of two negative chemically amplified resists is demonstrated. This study is based on the measurement of the minimum time needed for the removal of the remaining after spin coating solvent using a novel interferometer tool. In the materials examined the free volume enhances the developer selectivity resulting to higher resolution and significantly improved process latitude.
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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Raptis Ioannis
Institute Of Microelectronics Ncsr "demokritos
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Raptis Ioannis
Institute Of Microelectronics (imel) Ncsr "demokritos
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