Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films
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概要
- 論文の詳細を見る
- 2004-08-15
著者
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Raptis Ioannis
Institute Of Microelectronics Ncsr "demokritos
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NIAKOULA Dimitra
Institute of Microelectronics, NCSR "DEMOKRITOS"
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GOUSTOURIDIS Dimitrios
Institute of Microelectronics, NCSR "DEMOKRITOS"
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ARGITIS Panagiotis
Institute of Microelectronics, NCSR "DEMOKRITOS"
関連論文
- Determination of Acid Diffusion Parameters and Proximity Effect Correction for Highly Dense 0.15 μm Features on SAL-601
- Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films
- Silylation and Dry Development of Chemically Amplified Resists SAL601, AZPN114, and Epoxidised Resist (EPR) for High Resolution Electron-Beam Lithography
- Resist Lithographic Performance Enhancement Based on Solvent Removal Measurements by Optical Interferometry : Semiconductors
- Glass Transition Temperature Monitoring in Bilayer and Patterned Photoresist Films