Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer

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概要

• 論文の詳細を見る

• The precipitate density of interstitial oxygen in CZ silicon after nucleation and precipitate growth heat treatment was determined by investigating its crystal nature. The oxygen precipitate density in the vacancy-dominant crystal region was approximately two orders higher than that in the interstitial-silicon-dominant region. In addition, the oxygen precipitate density strongly depended on the nucleation temperature. The maximum nucleation of oxygen precipitates occurred at ${\sim}800$°C for the vacancy-dominant region and at ${\sim}700$°C for the interstitial-silicon-dominant crystal region.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Park Jea-gun

  Nano Soi Process Laboratory Hanyang University

• Kwack Kae-dal

  Nano Soi Process Laboratory Hanyang University

• Furuya Hisashi

  Crystaltechnology Division Sumitomo Mitsubishi Silicon Corporation

• Lee Gon-sub

  Nano Soi Process Laboratory Hanyang University

• FURUKAWA Jun

  CrystalTechnology Division, Sumitomo Mitsubishi Silicon Corporation

• Park Ki-hoon

  Nano Soi Process Laboratory Hanyang University

• Park Jea-Gun

  Nano SOI Process Laboratory, Hanyang University, 17 Heangdang-Dong, Seongdong-Gu, Seoul 133-791, Korea

• Kwack Kae-Dal

  Nano SOI Process Laboratory, Hanyang University, 17 Heangdang-Dong, Seongdong-Gu, Seoul 133-791, Korea

• Lee Gon-Sub

  Nano SOI Process Laboratory, Hanyang University, 17 Heangdang-Dong, Seongdong-Gu, Seoul 133-791, Korea

• Park Ki-Hoon

  Nano SOI Process Laboratory, Hanyang University, 17 Heangdang-Dong, Seongdong-Gu, Seoul 133-791, Korea

• Furukawa Jun

  CrystalTechnology Division, Sumitomo Mitsubishi Silicon Corporation, 4-3146-12 Hachimanpara, Yonezawa-shi, Yamagata 992-1128, Japan

• Furuya Hisashi

  CrystalTechnology Division, Sumitomo Mitsubishi Silicon Corporation, 4-3146-12 Hachimanpara, Yonezawa-shi, Yamagata 992-1128, Japan

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• Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
• Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer
• Crystal Originated Particle Induced Isolation Failure in Czochralski Silicon Wafers
• Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer

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