Scanning Tunneling Microscopy Study of Imaging Change Induced by Electric Field Change of Bipyridine Derivatives in Self-Assembled Monolayers
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概要
- 論文の詳細を見る
We observed image changes induced by the polarity change of electric fields, by scanning tunneling microscopy (STM), for pre-assembled alkanethiol self-assembled monolayers (SAMs) embedded with small amounts of the bipyridine moiety. In the case of bipyridine dithiol molecules, STM experiments revealed that the apparent thickness of the molecular protrusions was larger under the positive bias. In this case, it was considered that the image change was caused by a conductance difference with different polarities of the tip bias. However, for the bromine-terminated bipyridine molecules, the thickness of the molecular protrusions was larger under negative bias, contrary to the case of dithiol type molecule. We considered that this image change was caused by an actual molecular conformational change because of the strong dipole moment of bromine-terminated bipyridine molecule.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Nakano Miki
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Mizutani Wataru
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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TOKUHISA Hideo
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology
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KOYAMA Emiko
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology
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BELAISSAOUI Abdelhak
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology
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KANESATO Masatoshi
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology
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Nagawa Yoshinobu
Nanoarchitectonics Research Center (narc) Aist
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Ishida Takao
Nanotechnology Research Institute (nri) Aist
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Nagawa Yoshinobu
Nanoarchitectonics Research Center (NARC), AIST, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Koyama Emiko
Nanoarchitectonics Research Center (NARC), AIST, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Tokuhisa Hideo
Nanoarchitectonics Research Center (NARC), AIST, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Belaissaoui Abdelhak
Nanoarchitectonics Research Center (NARC), AIST, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Kanesato Masatoshi
Nanoarchitectonics Research Center (NARC), AIST, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Nakano Miki
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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