Field-Induced Conductance Change of Thin Organic Films Measured using Trench-Type Electrodes
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概要
- 論文の詳細を見る
We studied field-induced conductance change of thin organic films using the trench-type electrodes, where the gate field is applied from the sidewall of the trench. We fabricated the electrodes, and observed field effects of a conductive self-assembled film and oligothiophene thin films. The electric field generated by the electrode structure was calculated by a two-dimensional finite element method. The gate field strength becomes weaker as the film thickness is reduced, while the fields generated by the source–drain potential increase. This result denies the 'normally-off' characteristics since a small source–drain voltage between the nano-gap could cause the conductance change corresponding to the large gate voltage. Although three-dimensional structures or interface roughness could enhance the effective gate fields, we speculated that the self-assembled film showing the field effects was not a monolayer, but most probably multilayers or mounds of aggregated molecules of more than 10 nm thickness.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Mizutani Wataru
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Azehara Hiroaki
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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TSUKAGOSHI Kiyomi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Techn
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MURATA Kazuhiro
NRI-AIST, AIST Tsukuba Central
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Tsukagoshi Kiyomi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Mizutani Wataru
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Azehara Hiroaki
Nanotechnology Research Center, Research Institute for Electronic Science (RIES), Hokkaido University, Sapporo 001-0021, Japan
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Azehara Hiroaki
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Murata Kazuhiro
NRI-AIST, AIST Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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