Fabrication of High-Density Wiring Interposer for 10 GHz 3D Packaging Using a Photosensitive Multiblock Copolymerized Polyimide
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概要
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We have developed a high-density wiring interposer for 10 GHz 3D packaging using a photosensitive multiblock copolymerized polyimide. This new polyimide can realize micron-sized fine patterns without pattern shrinkage because of the nonrequirement of high-temperature thermal curing. The polyimide has good electric properties such as high breakdown voltage and low dielectric constant. Therefore, it is considered that by introducing this photosensitive polyimide as an insulator of the interposer, a high-performance interposer for LSI packaging can be realized. We confirmed experimentally that the high-density wiring interposer can be fabricated using the polyimide and gold. We optimized the basic properties of the photosensitive polyimide film for the fabrication of the interposer. Fine metal wirings were smoothly covered by the polyimide, as confirmed by scanning electron microscopy (SEM) of the cross section of the fabricated balance pair strip line structure. From the time domain reflectometry (TDR) measurement, it was determined that the characteristic impedance of the strip line is within 55.2 $\Omega$ $\pm$ 11.5% at the center of the interposer chip.
- 2004-07-15
著者
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Umemoto Mitsuo
Tsukuba Research Center Electronic System Integration Technology Research Department Association Of
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Tokoro Kazuhiko
Nanoelectronics Research Institute (neri) National Institute Of Advanced Industrial Science And Tech
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KIKUCHI Katsuya
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec
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SEGAWA Shigemasa
PI Research and Development Co., Ltd.
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NEMOTO Yoshihiko
Tsukuba Research Center, Electronic System Integration Technology Research Development, Association
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NAKAGAWA Hiroshi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec
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AOYAGI Masahiro
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec
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Jung Eun-sil
Nanoelectronics Research Institute (neri) National Institute Of Advanced Industrial Science And Tech
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Aoyagi Masahiro
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Jung Eun-Sil
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Segawa Shigemasa
PI Research and Development Co., Ltd., 12-5 Torihama, Kanazawa, Yokohama, Kanagawa 236-0002, Japan
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Tokoro Kazuhiko
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nemoto Yoshihiko
Tsukuba Research Center, Electronic System Integration Technology Research Development, Association of Super-Advanced Electronics Technologies (ASET), Room C-B-5, Tsukuba Center Inc., 2-1-6 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Kikuchi Katsuya
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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