A Study of Surface Resistance of Si(100)

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概要

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• Although a Si(100) surface forms dimers to produce a stable structure, it contains defects such as steps which are thought to affect surface resistance. We measured the surface resistance of step-containing Si manufactured by an ordinary process, and discovered that Si exhibits angular characteristics (anisotropy). After performing measurements at 10° intervals over two revolutions of 360°, we found that the results are reproducible between the first and second turns, that the resistance is periodic with periods of 180° and 360°, and that the sheet resistances measured by the four-point-probe method are 7–13-fold greater than those calculated from the bulk resistance and thickness of the samples. Similar measurements were performed on step-free Si surfaces, which were found to exhibit almost no periodicity and had a sheet resistance is of 4–10-fold the bulk value. It was suggested that the periodicity of resistance is caused by the presence of many steps on the Si surface.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• Iida Shoji

  Department Of Electrical Engineering And Electronics Osaka Sangyo University

• Tatsumi Shunsuke

  Department Of Biochemistry The Nippon Dental University School Of Life Dentistry At Tokyo

• Kitagawa Hiroki

  Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan

• Kitagawa Hiroki

  Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan

• Yukawa Motonobu

  Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan

• Iida Shoji

  Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan

• Yukawa Motonobu

  Department of Electrical Engineering and Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan

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