Irregular Resistance Change in Thin Ag Film on Si Substrate : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
We measured the change in crystallization and resistance of Ag film during deposition onto Si(100) or Si(111) substrates. For the Ag crystallization structure on Si(100), it was difficult to specify the type, but in the case of Si(111), the crystallization was √<3> x √<3>. Resistance change was irregular with increasing Ag film thickness for both Si(100) and Si(111) substrates. This irregularly can be explained by the partial occupied state formation due to Si-Ag electron coupling and by the quantum dot formation in the Ag island having a subband energy structure.
- 社団法人応用物理学会の論文
- 2001-06-15
著者
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Iida Shoji
Department Of Electronics Osaka Sangyo University
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Iida Shoji
Department Of Electrical Engineering And Electronics Osaka Sangyo University
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HIRAOKA Akihiko
Department of Electronics, Osaka Sangyo University
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TAI Toshiaki
Department of Electronics, Osaka Sangyo University
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NORITAKE Hideaki
Department of Electronics, Osaka Sangyo University
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Tai Toshiaki
Department Of Electronics Osaka Sangyo University
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Hiraoka Akihiko
Department Of Electronics Osaka Sangyo University
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Noritake Hideaki
Department Of Electronics Osaka Sangyo University
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Noritake Hideaki
Department of Electrical Engineering and Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan
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