Resistivity Oscillation of Ti Film During Growth

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概要

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• Very thin Ti films have resistivities with film-thickness-dependent osciliatory characteristics. Experimental results show that with H_2, CO_2 and O_2 gas adsorption on the film surface, the film structure and film components have little influence on the resistivity oscillation. Furthermore, the oscillation amplitudes are sensitive to the surface flatness. The resistivity oscillation is considered to occur by a modulation of the electron transmission, in the matching of two electron wave-functions at the interface of film/substrate and vacuum/film.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Iida Shoji

  Department Of Electronics Osaka Sangyo University

• Iida Shoji

  Department Of Electrical Engineering And Electronics Osaka Sangyo University

• ABE Sinji

  Department of Electrical Engineering and Electronics, Osaka Sangyo University

• HIDEMURA Yoshikazu

  Department of Electrical Engineering and Electronics, Osaka Sangyo University

• Hidemura Yoshikazu

  Department Of Electrical Engineering And Electronics Osaka Sangyo University:sanyo Electric Ltd. Gif

• Abe Sinji

  Department Of Electrical Engineering And Electronics Osaka Sangyo University:the Graduate School Of

関連論文

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