Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment

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概要

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• The conformality of the chemical-vapor-deposited (CVD) W films is investigated with TiN films prepared by chemical vapor deposition using tetrakis-dimethylamino-titanium (TDMAT). Plasma treatment of TDMAT-TiN films is shown to be unsuccessful at removing volatile impurities from side-wall films. The conformality of CVD W films is improved with thinner TDMAT-TiN films and with a low contact aspect ratio. Based on the results of chemical analysis and annealing experiments, we deduce that outgassing from the TiN film on the side wall of holes strongly affects the conformality of CVD W films. Volatile impurities in the TiN film lead to slower growth of W films on the side-wall than on the top of the holes, which results in the deterioration of the conformality of W films.

• 2001-01-15

著者

• Park Jin

  Central Research Center Hyundai Microelectronics Co. Ltd.

• Kim Do-heyoung

  Faculty Of Applied Chemical Engineering And Research Institute For Catalysis Chonnam National Univer

• Whang Soon-hong

  Central Research Center Hyundai Microelectronics Co. Ltd.

• Kim Jun

  Central Research Center Hyundai Microelectronics Co. Ltd.

• Lee Wan-Jin

  Faculty of Applied Chemistry and and Research Institute for Catalysis, Chonnam National University, 300 Youngbong-dong, KwangJu 500-757, Korea

• Kim Jun

  Central Research Center, Hyundai Microelectronics Co., Ltd., 1 Hyangjeong-Dong, ChungJu 360-480, Korea

• Cho Dong-Lyun

  Faculty of Applied Chemistry and and Research Institute for Catalysis, Chonnam National University, 300 Youngbong-dong, KwangJu 500-757, Korea

• Kim Do-Heyoung

  Faculty of Applied Chemistry and and Research Institute for Catalysis, Chonnam National University, 300 Youngbong-dong, KwangJu 500-757, Korea

• Park Jin

  Central Research Center, Hyundai Microelectronics Co., Ltd., 1 Hyangjeong-Dong, ChungJu 360-480, Korea

関連論文

• Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment
• Effect of N_2/H_2 Plasma Treatment on the Properties of TiN Films Prepared by Chemical Vapor Deposition from TiCl_4 and NH_3
• Bacterial-Assisted Immobilization of Lead in Soils : Implications for Remediation
• Bacterial-Assisted Immobilization of Lead in Soils : Implications for Remediation(Symposium 3.5.1 Heavy Metal Contaminated Soils,International Symposium: Soil Degradation Control, Remediation, and Reclamation, Tokyo Metropolitan University
• Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment
• Stability of Plasma Posttreated TiN Films Prepared by Alternating Cyclic Pulses of Tetrakis-Dimethylamido-Titanium and Ammonia

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